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NTR4003N, NVR4003N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 100 m A
30
40
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 30 V
T J = 25 ° C
1.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 10 V
± 1.0
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.8
3.4
1.4
V
mV/ ° C
Drain ? to ? Source On Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 4.0 V, I D = 10 mA
V GS = 2.5 V, I D = 10 mA
V DS = 3.0 V, I D = 10 mA
1.0
1.5
0.33
1.5
2.0
W
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
21
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Gate Charge
Gate ? to ? Drain Charge
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 5.0 V
V GS = 5.0 V, V DS = 24 V,
I D = 0.1 A
19.7
8.1
1.15
0.15
0.32
0.23
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
16.7
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DD = 5.0 V,
I D = 0.1 A, R G = 50 W
47.9
65.1
64.2
ns
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 mA
T J = 25 ° C
T J = 125 ° C
0.65
0.45
0.7
V
Reverse Recovery Time
t RR
V GS = 0 V, dI S /dt = 8A/ m s,
I S = 10 mA
14
ns
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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